Gate Dielectrics and Mos ULSIs

  • Title: Gate Dielectrics and Mos ULSIs
  • Author: Takashi Hori
  • ISBN: 3540631828
  • Page: 381
  • Format: reli
  • Gate Dielectrics and Mos ULSIs High dielectric Best Institute for GATE Coaching in Delhi IES Influence of sidewall spacer on threshold voltage of
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      Posted by:Takashi Hori
      Published :2018-010-22T00:09:40+00:00

    About Takashi Hori


    1. Takashi Hori Is a well-known author, some of his books are a fascination for readers like in the Gate Dielectrics and Mos ULSIs book, this is one of the most wanted Takashi Hori author readers around the world.


    642 Comments


    1. Ce livre, très ciblé, est néanmoins une référence sur les les diélectriques de grille CMOS.Il s'adresse à un public ayant déjà des notions d'ULSI.

      Reply

    2. A truly excellent summary of dielectric properties of SiO2 and nitrided oxides. The dielectric breakdown chapter is detailed, clear, and well thought-out. The references are useful and cover the literature well. Highly recommended. Kevin A. Shaw, Ph.D.

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    3. Very easy to understand. It helps to understande material science isuue in moden VLSI technique. It may useful for both academic student or researcher in industry. It covers the most important issues about gate dielectric from the fundamentals and historical review to state-of-art gate oxide technology. It will behepful to both academic and industry researcher.

      Reply

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